Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity and lattice energy
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چکیده
منابع مشابه
Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity, and lattice energy
Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semicondu...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2014
ISSN: 2045-2322
DOI: 10.1038/srep05758